PIC TYPE∨ Polarity∨ PD(mW)∨ ID(mA)∨ IDM(mA)∨ VDSS(V)∨ RDS(on)(max)(Ω)∨ RDS(on)(max)VGS(V)∨ RDS(on)(max)ID(A)∨ VGS(th)(V)∨ VGS(th)ID(μA)∨ gfs(min)(S)∨ gfs(min)VDS(V)∨ gfs(min)ID(A)∨ Qg(nC)@10V(typ)∨ MARKING∨ PACKAGE∨ PDF INQUIRY
MOS场效应晶体管.小信号MOSFET.LGE1014W.96
LGE1014W N 0.2 600.0 1800.0 30.0 0.335 4.5 0.6 0.95 250.0 - - - 2.23 KM SOT-323 询价 INQUIRY
MOS场效应晶体管.小信号MOSFET.LGE1014T.97
LGE1014T N 0.15 600.0 1800.0 30.0 0.335 4.5 0.6 0.95 250.0 - - - 2.23 KM SOT-523 询价 INQUIRY
MOS场效应晶体管.小信号MOSFET.LGE1014L.98
LGE1014L N 0.15 600.0 1800.0 30.0 0.335 4.5 0.6 0.95 250.0 - - - 2.23 KM DFN1006-3 询价 INQUIRY
MOS场效应晶体管.小信号MOSFET.LGE1014M.99
LGE1014M N 0.15 600.0 1800.0 30.0 0.335 4.5 0.6 0.95 250.0 - - - 2.23 KM SOT-723 询价 INQUIRY
MOS场效应晶体管.小信号MOSFET.LGE1015.100
LGE1015 P 0.42 -330 -1320 -30 2.5 -4.5 -0.3 -1.0 -250 - - - 1.22 1015.0 SOT-23 询价 INQUIRY
MOS场效应晶体管.小信号MOSFET.LGE1015W.101
LGE1015W P 0.25 -330 -1320 -30 2.5 -4.5 -0.3 -1.0 -250 - - - 1.22 1015.0 SOT-323 询价 INQUIRY
MOS场效应晶体管.小信号MOSFET.LGE1015T.102
LGE1015T P 0.15 -330 -1320 -30 2.5 -4.5 -0.3 -1.0 -250 - - - 1.22 1015.0 SOT-523 询价 INQUIRY
MOS场效应晶体管.小信号MOSFET.LGE1015L.103
LGE1015L P 0.15 -330 -1320 -30 2.5 -4.5 -0.3 -1.0 -250 - - - 1.22 1015.0 DFN1006-3 询价 INQUIRY
MOS场效应晶体管.小信号MOSFET.LGE1015M.104
LGE1015M P 0.15 -330 -1320 -30 2.5 -4.5 -0.3 -1.0 -250 - - - 1.22 1015.0 SOT-723 询价 INQUIRY
MOS场效应晶体管.小信号MOSFET.LGE2231L.105
LGE2231L N 0.45 800.0 1000.0 20.0 0.28 4.5 0.5 0.65 250.0 - - - 1.4 K21 DFN1006-3 询价 INQUIRY